Oliver Williams
(University of Cardiff, United Kingdom)

Diamond Integration with non-diamond materials
Srabanti Chowdhury

Srabanti Chowdhury
(Stanford University, USA)

Making GaN more efficient with avalanche and thermal management

Enrico Zanoni
(University of Padova, Italy)

Microwave and millimeter-wave GaN HEMTs: impact of epitaxial structure on short-channel effects, electron
trapping and reliability

Joana Catarina Mendes
(Instituto de Telecomunicações, Aveiro, Portugal)

Improving the performance of GaN HEMTs with diamond

Siddharth Rajan
(Ohio State University, USA)

Device Engineering for Ultra-Wide Bandgap Semiconductors
Sebastian Pazos

Sebastian Pazos
(KAUST, Saudi Arabia)

h-BN as 2D functional layered insulator: from fundamentals to True Random Number Generation
Leone Stefano

Stefano Leone
(Fraunhofer IAF, Freiburg, Germany)

Status and Perspectives of AlScN materials grown by MOCVD

Yvon Cordier
(CRHEA-CNRS, France)

Past and new trends in the hetero-epitaxy of III-Nitrides for power devices
David Cooper

David Cooper
Université Grenoble Alpes, France)

Field mapping in a TEM with nm-spatial resolution by off-axis electron holography

Sven Besendörfer
(Fraunhofer IIS2, Erlangen, Germany)

AlN for next generation power devices: from crystal growth to epitaxy

Marilena Vivona
(CNR-IMM Catania, Italy)

Recent trends in Schottky barriers for energy efficient silicon carbide power devices

Jean-Francois Michaud
Université de Tours, France)

Cubic silicon carbide (3C-SiC) MEMS for gas detection
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