Sébastien Sicre (Infineon Technologies, Austria)

Characterization and model of dynamic RDSon drift of normally-off power GaN HEMTs

Ferdinando Iucolano (STMicroelectronics, Italy)

GaN on Si Power and RF Technology: Devices and Application
Invited Speakers

Guidelines for presenters

Oliver Williams
(University of Cardiff, United Kingdom)

Diamond Integration with non-diamond materials
Srabanti Chowdhury

Srabanti Chowdhury
(Stanford University, USA)

Making GaN more efficient with avalanche and thermal management

Enrico Zanoni
(University of Padova, Italy)

Microwave and millimeter-wave GaN HEMTs: impact of epitaxial structure on short-channel effects, electron
trapping and reliability

Joana Catarina Mendes
(Instituto de Telecomunicações, Aveiro, Portugal)

Improving the performance of GaN HEMTs with diamond

Siddharth Rajan
(Ohio State University, USA)

Device Engineering for Ultra-Wide Bandgap Semiconductors
Sebastian Pazos

Sebastian Pazos
(KAUST, Saudi Arabia)

h-BN as 2D functional layered insulator: from fundamentals to True Random Number Generation
Leone Stefano

Stefano Leone
(Fraunhofer IAF, Freiburg, Germany)

Status and Perspectives of AlScN materials grown by MOCVD

Yvon Cordier
(CRHEA-CNRS, France)

Past and new trends in the hetero-epitaxy of III-Nitrides for power devices
David Cooper

David Cooper
Université Grenoble Alpes, France)

Field mapping in a TEM with nm-spatial resolution by off-axis electron holography

Sven Besendörfer
(Fraunhofer IIS2, Erlangen, Germany)

AlN for next generation power devices: from crystal growth to epitaxy

Marilena Vivona
(CNR-IMM Catania, Italy)

Recent trends in Schottky barriers for energy efficient silicon carbide power devices

Jean-Francois Michaud
Université de Tours, France)

Cubic silicon carbide (3C-SiC) MEMS for gas detection

Guidelines for presenters


The official Conference’s language is English.

Only oral presentations (invited or regular talks) will be accepted at the Conference.

The time slot allocated for oral presentation is 30 minutes for invited talks (25 minutes of presentation + 5 minutes of discussion) and 10 minutes for regular talks (7 minutes of presentation + minutes + 3 minutes of discussion).

The sessions’s Chairs will guarantee the respect of the time schedule and moderate the discussion.

The presentations must be prepared in Microsoft Power Point or in PDF format. A laptop will be available in the Conference room. The use of personal laptops from the speakers will be not allowed. It is recommended to structure the presentation format in a 16:9 aspect ratio.

The speakers must bring their presentation in a USB stick and upload it on the Conference laptop before their session’s start, e.g. in the early morning or during the coffee break.

All the presentations uploaded on the Conference’s laptop will be deleted by the Organizers after the end of the Conference and will be not provided to anyone.

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