oliver-williams

Oliver Williams
(University of Cardiff, United Kingdom)

Diamond Integration with non-diamond materials
Srabanti Chowdhury

Srabanti Chowdhury
(Stanford University, USA)

Making GaN more efficient with avalanche and thermal management
Enrico-Zanoni

Enrico Zanoni
(University of Padova, Italy)

Microwave and millimeter-wave GaN HEMTs: impact of epitaxial structure on short-channel effects, electron
trapping and reliability
Mendes

Joana Catarina Mendes
(Instituto de Telecomunicações, Aveiro, Portugal)

Improving the performance of GaN HEMTs with diamond
Rajan-Siddharth

Siddharth Rajan
(Ohio State University, USA)

Device Engineering for Ultra-Wide Bandgap Semiconductors
Sebastian Pazos

Sebastian Pazos
(KAUST, Saudi Arabia)

h-BN as 2D functional layered insulator: from fundamentals to True Random Number Generation
Leone Stefano

Stefano Leone
(Fraunhofer IAF, Freiburg, Germany)

Status and Perspectives of AlScN materials grown by MOCVD
Cordier

Yvon Cordier
(CRHEA-CNRS, France)

Past and new trends in the hetero-epitaxy of III-Nitrides for power devices
David Cooper

David Cooper
(CEA-LETI and
Université Grenoble Alpes, France)

Field mapping in a TEM with nm-spatial resolution by off-axis electron holography
Sven

Sven Besendörfer
(Fraunhofer IIS2, Erlangen, Germany)

AlN for next generation power devices: from crystal growth to epitaxy
Vivona

Marilena Vivona
(CNR-IMM Catania, Italy)

Recent trends in Schottky barriers for energy efficient silicon carbide power devices
Michaud

Jean-Francois Michaud
(GREMAN-CNRS and
Université de Tours, France)

Cubic silicon carbide (3C-SiC) MEMS for gas detection
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