Invited Speakers
Oliver Williams
(University of Cardiff, United Kingdom)
Diamond Integration with non-diamond materials
Srabanti Chowdhury
(Stanford University, USA)
Making GaN more efficient with avalanche and thermal management
Enrico Zanoni
(University of Padova, Italy)
Microwave and millimeter-wave GaN HEMTs: impact of epitaxial structure
on short-channel effects, electron
trapping and reliability
trapping and reliability
Joana Catarina Mendes
(Instituto de Telecomunicações, Aveiro, Portugal)
Improving the performance of GaN HEMTs with diamond
Siddharth Rajan
(Ohio State University, USA)
Device Engineering for
Ultra-Wide Bandgap Semiconductors
Sebastian Pazos
(KAUST, Saudi Arabia)
h-BN as 2D functional layered insulator: from
fundamentals to True Random Number Generation
Stefano Leone
(Fraunhofer IAF, Freiburg, Germany)
Status and Perspectives of AlScN materials grown by MOCVD
Yvon Cordier
(CRHEA-CNRS, France)
Past and new trends in the hetero-epitaxy of III-Nitrides for power devices
David Cooper
(CEA-LETI and
Université Grenoble Alpes, France)
Field mapping in a TEM with nm-spatial resolution by off-axis electron holography
Sven Besendörfer
(Fraunhofer IIS2, Erlangen, Germany)
AlN for next generation power devices: from crystal growth to epitaxy
Marilena Vivona
(CNR-IMM Catania, Italy)
Recent trends in Schottky barriers for energy efficient silicon carbide power devices
Jean-Francois Michaud
(GREMAN-CNRS and
Université de Tours, France)
Cubic silicon carbide (3C-SiC) MEMS for gas detection