Program

Program File (PDF)
Guidelines for presenters
Day 1 - 21-05-2023
18:00 - 19:00 - Registration
19:00 - 21:00 - Welcome reception
Day 2 - 22-05-2023
08:30 - 09:10 Registration - Conference Opening
09:10 - 10:30 HEMTs Technology I
Session Chairs: F. Medjdoub, P. Fiorenza 
  1. Srabanti Chowdhury (invited) Making GaN more efficient with avalanche and thermal management
  2. Kei Sakota Design of high-Al-content AlGaN/GaN HEMTs for improved DC and RF operation
  3. Elodie Carneiro Comparison of Sub-Micron thick AlGaN/GaN and AlN/GaN HEMTs on Silicon for RF applications
  4. Hossein Yazdani Towards More Efficient Ka-band Power Cells: Low-Resistive Gate Module for RF GaN- HFETs by Electroplating
  5. Kathia Harrouche Pushing Q-band power performances by means of buffer engineering in AlN-GaN HEMTs
  6. Ryota Ochi Influence of the parallel conduction on the current non-linearity of GaN based MIS-HEMTs in the forward bias region
10:30 - 11:00 Coffee Break
11:00 - 12:30 Nitrides materials & defects
Session Chairs: M. Leszczynski, E. Iliopulos
  1. Stefano Leone  (Invited) Status and Perspectives of AlScN Materials Grown by MOCVD
  2. Yvon Cordier Evaluation of the electrical properties of ScAlN/GaN HEMTs grown by ammonia source molecular beam epitaxy
  3. Alice Hospodková Improvement of Electron Transport Properties in 2DEG bellow AlGaN/GaN interface by V-pit formation
  4. Matej Matus Electrically Active Defects in InAlGaN/GaN HEMT structures
  5. Piotr Kruszewski The Effect of Electric-Field Enhancement of Electron Emission Rates for Deep-Level Traps in n-type GaN
  6. Roger A. Peña Temperature analysis of reverse leakage current hysteresis in GaN Schottky Barrier Diodes
  7. Lucía Nieto Sierra Study of AlN piezoelectric thin films deposited by reactive DC magnetron sputtering
12:30-14:00 Light Lunch
14:00 - 15:30 Other III-V compounds
Session Chairs: D. Pavlidis, K. Zekentessdfsd
  1. Lorenzo Faraone Dislocation filtering technology for defect reduction in heteroepitaxially-grown semiconductors
  2. Jonathan Hall Logic Without CMOS: A III-V Semiconductor, Single Charge Carrier Approach to Digital Logic 
  3. Vladimir Drakinskiy Integrated Schottky Diode Mixer Technology up to 5 THz 
  4. Pablo Caño Room temperature pholuminescence of dilute (GaAs)1-x(Ge2)x ternary alloys 
  5. Gilberto A. Umana Membreno High-Resolution Mobility Spectrum Analysis of Electronic Transport in InAs/GaSb type-II Superlattices for Infrared Sensing Applications 
  6. Gizem Acar Enhancing the efficiency of type-II GaSb quantum ring devices at telecommunication wavelengths using cavity effects 
  7. Samuel Jones Distributed Bragg Reflectors for GaSb/GaAs Quantum-Ring Vertical-Cavity Surface-Emitting Lasers Targeting Telecommunications and Sensing 
  8. Nima Dehdashtiakhavan High performance HgCdTe short-wave infrared detectors for emerging sensing and imaging applications 
  9. Xiuxin Xia An Optimised Fabrication Flow for Scaling of ULTRARAM™ Devices
15:30 - 16:00 Coffee Break
16:00 - 18:00 2D Materials
Session Chairs: J.C. Mendes, J. Sun
  1. Sebastian Pazos (Invited)  Hexagonal boron nitride as two-dimensional functional layered insulator: from fundamentals to true random number generation
  2. Béla Pécz Highly uniform MoS2 heterojunctions with bulk GaN by sulfurization of ultrathin MoOx film
  3. Filippo Giannazzo Towards large area MoS2 heterostructures with epitaxial graphene on SiC
  4. Salvatore Ethan Panasci Highly crystalline monolayer MoS2 on sapphire by sulfurization of Molybdenum oxide ultrathin films
  5. Simonpietro Agnello Aging effects and thermally induced modification of monolayer MoS2 obtained by gold assisted exfoliation
  6. Jozef Novák Bipolar heterojunction phototransistor based on thin PtSe2 layer
  7. Emma Keel Three-dimensional graphene foam for energy harvesting devices
  8. Zsofia Baji VO2 layers prepared with different approaches: relationship between resistive switching and structural properties
  9. Marco Cannas Graphitization effects induced by thermal treatments of 4H-SiC
  10. Zsofia Baji Nucleation of atomic layer deposited metal sulphide layers
Day 3 -23-05-2023
08:30 - 10:30 4H-SiC device technology
Session Chairs: F. Giannazzo, F. La Via 
  1.  Marilena Vivona (Invited) Recent trends in Schottky barriers for energy efficient silicon carbide power devices
  2. Marco Mauceri 200 mm Silicon Carbide Epitaxy
  3. Bart J. Van Zeghbroeck Hot filament CVD growth and characterization of nitrogen-doped 4H-SiC
  4. Alfio Samuele Mancuso Hydrogen etching process of 4H-SiC (0001) in limited regions
  5. Aleš Chvála Characterization of Electrical Properties of Power SiC Schottky Diodes
  6. Patrick Fiorenza Time Dependent Dielectric Breakdown in 4H-SiC power MOSFETs under positive and negative gate-bias and gate-current stresses at 200°C
  7. Bruno Galizia Al2O3/AlN dielectric stacks for silicon carbide (4H-SiC) by Thermal and Plasma-Enhanced ALD growth
  8. Carmen Altana Heavy ions radiation damage on silicon and silicon carbide detectors
  9. Francesca Migliore Response of epitaxial layer of 4H-SiC to β-rays and X-rays irradiation
  10. Scott Greenhorn 4H-SiC N-P-N Epitaxial and Implanted Junctions for Isolation in Neural Interfaces
10:30 - 11:00 Coffee Break
11:00 - 12:30 UWBG: Ga2O3 & ZnO
Session Chairs: S. Besendoerfer, F. Lloret
  1. Siddharth Rajan  (invited) Device Engineering for Ultra-Wide Bandgap Semiconductor
  2. Georges Brémond Demonstration of a p/n junction behaviour using space charge spectroscopy in Zn:β-Ga2O3 grown by MOCVD
  3. Filip Tuomisto Electrical compensation and vacancy defects in Si doped β-(Al,Ga)2O3
  4. Marcell Gajdics Study of the annealing-induced crystallization of Ga2O3 prepared by radio frequency sputtering 
  5. Carlos García Nuñez Optimizing the Piezoelectric Response of Zinc Oxide Thin Films through Plasma Coating Deposition 
  6. Manuel Pelayo Garcia On the quasi-static measurements of piezoelectric coefficient in semiconductor thin films for ultrasonic sensors
12:30-14:00 Light Lunch
14:00 - 15:40 HEMTs Reliability
Session Chairs: G. Meneghesso, H.J Würfl 
  1. Enrico Zanoni  (invited) Microwave and millimeter-wave GaN HEMTs: impact of epitaxial structure on short-channel effects, electron trapping and reliability
  2. Giuseppe Greco Correlation between gate current transport and degradation mechanisms in p-GaN-gate HEMTs 
  3. Myeongsu Chae Temperature dependence of the threshold voltage instability in normally-off AlGaN/GaN HEMTs with p-GaN gate 
  4. Giuseppe Luongo Gate Leakage Transport Mechanism Analysis for p-GaN Power HEMTs 
  5. Maurizio Moschetti Temperature Effect on RON-degradation induced by Off-state Drain Voltage Stress 
  6. Giovanni Giorgino Improved High Temperature Behaviour of On-Resistance in 100V p-GaN HEMTs 
  7. Nicolò Zagni Modelling and Simulation of ON-Resistance Instability due to Gate Bias in p-GaN Power HEMTs 
  8. Cristina Miccoli Dynamic RDS-on degradation analysis on power GaN HEMT by means of TCAD simulations and experimental measurement.
15:40 - 16:10 Coffee Break
Excursion and Social dinner
Day 4 - 24-05-2023
09:00 - 10:30 HEMTs Technology II
Session Chairs: E. Zanoni, E. Pin
  1. Yvon Cordier (Invited) Past and new trends in the hetero-epitaxy of III-Nitrides for power devices                   
  2. Reda Elwaradi Epitaxial growth of AlGaN/GaN HEMTs on patterned Si substrate for high voltage power switching application 
  3. Vanya Darakchieva Tunning composition in graded channel and high-Al content AlGaN barrier HEMTs 
  4. Etienne Nowak Recent Achievements in Recessed Gate MOS-channel HEMT Technology 
  5. Joel T. Asubar Threshold voltage control in GaN-based MIS-HEMTs with recessed structure and regrown AlGaN barrier layers 
  6. Jun-Hyeok Yim Normally-off AlGaN/GaN MIS-HFET with AlN Passivation
10:30 - 11:00 Coffe Break
11:00 - 12:30 UWBG: AlN & Diamond
Session Chairs: S. Rajan, B. Pecz
  1. Oliver Williams (invited) Diamond Integration with non-diamond materials
  2. Beatriz Soto Portillo ZrO2/diamond-based deep depletion MOSFET: electro-optical control of the threshold voltage 
  3. Fernando Lloret Effect of methane on phosphorus and nitrogen co-doped CVD diamond growth 
  4. Joana C. Mendes CVD diamond electrodes for in vitro electrophysiological sensing devices 
  5. Sven Besendörfer (invited) AlN for next generation power devices: from crystal growth to epitaxy
12:30 - 14:00 Light Lunch
14:00 - 15:30 Nitrides Quantum Wells
Session Chairs: S. Leone, P. Prysawko
  1. David Cooper (invited) Field mapping of IIIV semiconductor devices by off-axis electron holography
  2. Eleftherios Iliopoulos Surface kinetics mechanisms in RF-MBE epitaxy of InGaN alloys: The relative role of adsorption and decomposition concerning the entire ternary range 
  3. Mike Leszczynski Diffusion of magnesium and silicon in AlGaInN layers 
  4. Ewa Grzanka Temperature induced structural and optical changes in InGaN/GaN Quantum Wells 
  5. Marco Nicoletto InGaN/GaN Multiple Quantum Wells solar cells: a trade-off in p-GaN thickness, to optimize reliability and quantum efficiency 
  6. Mikolaj Grabowski The influence of point defects present in the substrates with different TDD after ion implantation on InGaN/GaN QWs properties and stability at high temperatures 
  7. Hoi Wai Choi Integration of GaN-based optoelectronic devices with Si-based integrated circuits
15:30 - 16:00 Coffee Break
16:00 - 17:30 Cubic Silicon Carbide (3C-SiC)
Session Chairs: D. Alquier, M. Vivona
  1. Jean-François Michaud (Invited) 3C-SiC MEMS for gas detection
  2. Francesco La Via Measurement of residual stress, Young’s modulus and beam resonator Q factor on micromachined monocrystalline 3C-SiC layers grown on <111> silicon 
  3. Viviana Scuderi Effect of stress on 3C-SiC resonator by Raman spectroscopy
  4. Emanuela Schilirò Al2O3 layers grown by Atomic Layer Deposition as gate insulator in 3C-SiC MOS devices
  5. Jianwu Sun Growth of High-Quality Cubic Silicon Carbide and Graphene for Conversion of Solar Energy into Renewable Fuels
Day 5 - 25-05-2023
08:30 - 10:30 GaN devices & technology
Session Chairs: G. Greco , Y. Cordier
  1. Joana Catarina Mendes (Invited) Improving the performance of GaN HEMTs with diamond
  2. Youssef Hamdaoui High quality drift layer thickness scaling in vertical GaN-on-Silicon PIN diodes
  3. Sung-Hoon Lee Design Methodology of Trench MIS Field Plate for GaN Vertical PN Diode 
  4. Mahmoud Abou Daher Power Handling of GaN Schottky Diodes on Semi-Insulating Ammonothermal GaN Substrate at 94 GHz
  5. Seiya Kawasaki Fabrication of GaN Hi-Lo IMPATT diode 
  6. Pawel Prystawko N-type sputtered GaN subcontact layers 
  7. Zihao Lyu Exploring the Effectiveness of Ni/ITO Ohmic Contact on p-Type GaN 
  8. Camille Sonneville Micro-Raman characterization of vertical GaN Schottky and PN diodes 
  9. Héctor Sánchez-Martín Trap-related slow transient effects in AlGaN/GaN nanochannels at low temperature  
  10. Dimitris Pavlidis Vertical top-down GaN Nanowire Field Emitters with an Integrated Air-Bridge Anode Approach
10:30 - 11:00 Coffee Break
11:00 - 12:30 Packaging and Applications of SiC & GaN devices
Session Chairs: C. Giaconia, A. Chvala
  1. Nadia Lecci How to exploit the intrinsic GaN technology features: application hints and integrated solutions performance evaluation 
  2. Gregorio Iuzzolino GaN based devices integration in the electric vehicle world 
  3. Daniele Scirè Comparison between SiC and GaN switching devices in fast-recharging systems for electric vehicles 
  4. Giacomo Scelba Performance Evaluation of GaN Technology on MultiLevel Inverters for Electric Traction Systems
  5. Giuseppe Galioto GaN and SiC devices’ input capacitance experimental characterization 
  6. Vincenzo Vinciguerra Using ANSYS Finite Elements Analysis to Calculate the Equivalent Thickness of a Taiko Wafer 
  7. Giuseppe Bellomonte Corrosion study for RF power GaN HEMT in FO-WLP packaging
12:30 - 14:00 Light Lunch
14:00 - 15:00  Industrial Session
Session Chairs: F. Roccaforte
  1. Ferdinando Iucolano (Keynote)  STMicroelectronics, Italy GaN on Si Power and RF Technology: Devices and Application  
  2. Sébastien Sicre  (Keynote)  Infineon Technologies, Austria Characterization and model of dynamic RDSon drift of normally-off power GaN HEMTs
15:00 - 15:30  Student Awards Cerimony &  Closing Remarks

Guidelines for presenters

 

The official Conference’s language is English.

Only oral presentations (invited or regular talks) will be accepted at the Conference.

The time slot allocated for oral presentation is 30 minutes for invited talks (25 minutes of presentation + 5 minutes of discussion) and 10 minutes for regular talks (7 minutes of presentation + minutes + 3 minutes of discussion).

The sessions’s Chairs will guarantee the respect of the time schedule and moderate the discussion.

The presentations must be prepared in Microsoft Power Point or in PDF format. A laptop will be available in the Conference room. The use of personal laptops from the speakers will be not allowed. It is recommended to structure the presentation format in a 16:9 aspect ratio.

The speakers must bring their presentation in a USB stick and upload it on the Conference laptop before their session’s start, e.g. in the early morning or during the coffee break.

All the presentations uploaded on the Conference’s laptop will be deleted by the Organizers after the end of the Conference and will be not provided to anyone.

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